异动解读|Roundhill Memory ETF夜盘下跌5.03%,存储芯片竞争担忧加剧
行情直击10-13
10月13日,Roundhill Memory ETF夜盘下跌5.03%,报51.97美元/股,成交额5015.08万美元。消息面上,长鑫存储宣布4F² DRAM架构研发取得关键进展,引发市场对存储芯片竞争格局加剧的担忧,存储板块整体承压。
同日,韩国综合指数跌幅一度扩大至5.1%,触发交易所Sidecar熔断机制,三星电子与SK海力士双双跌逾6%,走向五连跌。闪迪夜盘下跌3.45%,慧荣科技跌6.26%,美光科技跌4.04%,SK海力士跌4.01%。外资对存储板块态度趋于谨慎,持有SK海力士比例连续多个交易日徘徊在49%区间。大摩最新报告亦指出,市场交易焦点已从当期利润规模转向利润能否继续加速,存储芯片超级周期进入盈利兑现大考场。
Dataram开发、制造并销售用于网络服务器和工作站的大容量内存产品,为原始设备制造商提供定制内存设备,并为计算机制造商提供兼容内存。
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